THz intersubband absorption in n-type Si_1−xGe_x parabolic quantum wells 

Appl. Phys. Lett. 118, 163106 (2021); https://doi.org/10.1063/5.0048344. Available open access: https://doi.org/10.5281/zenodo.4659850

High-quality n-type continuously graded Ge-rich Si_1−xGe_x parabolic quantum wells with different doping levels were grown by using ultrahigh-vacuum chemical vapor deposition on Si(001) substrates. A thorough structural characterization study highlights an ideal parabolic compositional profile. THz intersubband absorption has been investigated in modulation-doped samples and samples directly doped in the wells. The comparison of experimental absorption data and theoretical calculations allowed us to quantify the impact of electron correlation effects on the absorption resonances in the different doping conditions and for electron sheet densities in the (1÷6)×10¹¹ cm⁻² range. A single optical resonance is present in modulation doped samples. Its peak energy and line shape are independent of temperature-induced variations of the electron distribution in the subbands up to 300 K, in agreement with the generalized Kohn theorem. This achievement represents a relevant step forward for the development of CMOS compatible optoelectronic devices in the THz spectral range, where thermal charge fluctuations play a key role.